? 2013 littelfuse, inc. specifcations are subject to change without notice. revised: 04/24/13 description applications the sp3012 integrates either 4 or 6 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide protection for electronic equipment that may experience destructive electrostatic discharges (esd). these robust devices can safely absorb repetitive esd strikes above the maximum level specifed in the iec61000-4-2 international standard (8kv contact discharge) without performance degradation. the extremely low loading capacitance also makes it ideal for protecting high speed signal lines such as usb3.0, hdmi, usb2.0, and esata. features ? esd, iec61000-4-2, 12kv contact, 25kv air ? eft, iec61000-4-4, 40a (t p =5/50ns) ? lightning, iec61000-4-5, 4a (t p =8/20s) ? low capacitance of 0.5pf (typ) per i/o ? low leakage current of 1.5a (max) at 5v ? small form factor dfn (jedec mo- 229) package provides fow through routing to simplify pcb layout ? lcd/pdp tvs ? external storages ? dvd/blu-ray players ? desktops ? mp3/pmp ? set top boxes ? smartphones ? ultrabooks/notebooks ? digital cameras pinout 5 4 3 2 1 6 7 8 9 10 *pins 6, 7, 9, 10 are not internally connected but should be connected to the trace. life support note: not intended for use in life support or life saving applications the products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. application example for usb3.0 rohs pb green 8 7 14 1 *pins 1, 2, 3, 4, 5, 6, 7 are not internally connected but should be connected to the opposite pin with the pcb trace. sp3012-06utg SP3012-04UTG sp3012 series 0.5pf diode array functional block diagram gn d (p in s 3, 8) pin 5 pin 2 pin 1 pin 4 gn d (p in s 3, 8) pin 5 pin 2 pin 1 pin 4 SP3012-04UTG sp3012-06utg si gn al gn d usb co nt ro ll er usb po rt v bu s ss tx + ss tx - ssrx + ssrx - gnd d+ d- sp 3012-0 6utg ic additional information datasheet resources samples tvs diode arrays (spa ? diodes) low capacitance esd protection - sp3012 series
? 2013 littelfuse, inc. specifcations are subject to change without notice. revised: 04/24/13 sp3012 caution: stresses above those listed in absolute maximum ratings may cause permanent damage to the device. this is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specifcation is not implied. absolute maximum ratings symbol parameter value units i pp peak current (t p =8/20s) 4.0 a t op operating temperature C40 to 125 c t stor storage temperature C55 to 150 c electrical characteristics (t op =25oc) parameter symbol test conditions min typ max units reverse standoff voltage v rwm i r 1a 5.0 v reverse leakage current i leak v r =5v, any i/o to gnd 1. 5 a clamp voltage 1 v c i pp =1a, t p =8/20s, fwd 6.6 v i pp =2a, t p =8/20s, fwd 7. 0 v dynamic resistance r dyn (v c2 - v c1 ) / (i pp2 - i pp1 ) 0.4 esd withstand voltage 1 v esd iec61000-4-2 (contact) 12 kv iec61000-4-2 (air) 25 kv diode capacitance 1 c i/o-gnd reverse bias=0v, f=1 mhz 0.5 pf diode capacitance 1 c i/o-/o reverse bias=0v, f=1 mhz 0.3 pf note: 1 parameter is guaranteed by design and/or device characterization. insertion loss (s21) i/o to gnd capacitance vs. bias voltage clamping voltage vs. i pp bi as vo lt age (v ) ca paci ta nce (p f) 0. 0 0. 2 0. 4 2. 03 .0 4. 05 .0 0.6 0.8 1.0 0. 0 2. 0 4. 0 6. 0 8. 0 10. 0 1234 cl amp vo lt ag e (v) cu rren t (a ) - 3 0 - 18 - 15 - 12 - 9 - 3 0 a t t e n u a t i o n ( d b ) - 6 - 21 - 24 - 27 100 1000 f r e q u e n c y ( m h z ) 0 1 2 3 4 5 6 7 8 9 10 11 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 tlp v oltage (v) tlp cur rent (a) transmission line pulsing(tlp) plot tvs diode arrays (spa ? diodes) low capacitance esd protection - sp3012 series
? 2013 littelfuse, inc. specifcations are subject to change without notice. revised: 04/24/13 ti me te mperature t p t l t s(max) t s(min) 25 t p t l t s time to peak temperature preheat p rehea t ramp-up r amp-up ramp-down r amp-d o critical zone t l to t p c ritical zo n e t l to t p refow condition pb C free assembly pre heat - temperature min (t s(min) ) 150c - temperature max (t s(max) ) 200c - time (min to max) (t s ) 60 C 180 secs average ramp up rate (liquidus) temp (t l ) to peak 3c/second max t s(max) to t l - ramp-up rate 3c/second max refow - temperature (t l ) (liquidus) 217c - temperature (t l ) 60 C 150 seconds peak temperature (t p ) 260 +0/-5 c time within 5c of actual peak temperature (t p ) 20 C 40 seconds ramp-down rate 6c/second max time 25c to peak temperature (t p ) 8 minutes max. do not exceed 260c soldering parameters product characteristics lead plating pre-plated frame lead material copper alloy lead coplanarity 0.0004 inches (0.102mm) substitute material silicon body material molded epoxy flammability ul 94 v-0 notes : 1. all dimensions are in millimeters 2. dimensions include solder plating. 3. dimensions are exclusive of mold fash & metal burr. 4. blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. package surface matte fnish vdi 11-13. part numbering system part marking system sp 3012 xx u t g series packag e dfn-10 (2.5x1.0mm) t= tape & reel g= green number of channels ? tvs diode arrays (spa diodes) dfn-14 (3.5x1.35mm) 04 = 4 channel 06 = 6 channel v * * product series v = sp301 2 assembly site number of channels 4 = 4 channel 6 = 6 channel part number package marking min. order qty. SP3012-04UTG dfn-10 v*4 3000 sp3012-06utg dfn-14 v*6 3000 ordering information pulse waveform power derating curve 0% 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% 0. 05 .0 10.0 15.0 20.0 25.0 30.0 ti me ( s ) pe r cen t of i pp 0 10 20 30 40 50 60 70 80 90 100 110 02 55 07 51 00 12 51 50 ambient temperature-t a ( o c) % of r ated po we r or i pp tvs diode arrays (spa ? diodes) low capacitance esd protection - sp3012 series
? 2013 littelfuse, inc. specifcations are subject to change without notice. revised: 04/24/13 application information adding external esd protection to a high-speed data port is not trivial for a variety of reasons. 1. esd protection devices will add parasitic capacitance to each data line from line to gnd and line to line causing impedance mismatches between the differential pairs. this ultimately affects the signal eye-diagram and whether or not the transceiver can distinguish a 1 from a 0. 2. esd devices should be placed as close as possible to the port being protected to maximize their effect (i.e. clamping capability) and minimize the effect that pcb trace inductance can have during an esd transient. depending on the package size and pinout this could be challenging and the bigger the package, the larger the land pattern must be, which adds more parasitic capacitance. 3. stub traces can add another element of discontinuity adversely affecting signal integrity so esd protection is best employed when its overlaid on the data lines or when the signals can simply pass underneath the device. taking all of this into account littelfuse developed the sp3012 series which was designed specifcally for protection of high-speed data ports such as hdmi 1.3/1.4 and usb 3.0. they present less than 0.5pf from line to gnd and only 0.3pf from line to line minimizing impedance mismatch between the differential pairs. furthermore, the sp3012 is rated up to 12kv (contact discharge) which far exceeds the maximum requirement of the iec 61000-4-2 standard. there are two options available (4 channel and 6 channel) and both are housed in leadless dfn packages so the data lines can pass directly underneath the device to reduce discontinuities and maintain signal integrity. j1 u1 figure 1 shows the layout used for the sp3012-06utg in a usb 3.0 application. the traces routed toward the top are the two legacy usb 2.0 lines (d+/d-) that run at the slower speed of 480mbps and therefore are not as critical as the 5gbps super-speed traces. figure 1: pcb layout of the sp3012-06utg for usb 3.0 figure 2: usb 3.0 eye diagram with the sp3012-06utg figure 3: usb 3.0 eye diagram with the SP3012-04UTG figure 2 shows the usb 3.0 eye diagram that resulted from the pcb layout above with the sp3012-06utg soldered on the landing pattern. b ase: 27 .0000 ns scale:33.0 ps/div 50 0 0 -50 0 wfrms:500 using a similar layout as above, figure 3 shows the eye diagram that resulted using the SP3012-04UTG to protect the super-speed data lines and the sp3003-02utg to protect the legacy data pair. b ase: 27 .0000 ns scale:33.0 ps/div 50 0 0 -50 0 wfrms:850 signal integrity of high-speed data interfaces usb 3.0 eye diagram data tvs diode arrays (spa ? diodes) low capacitance esd protection - sp3012 series
? 2013 littelfuse, inc. specifcations are subject to change without notice. revised: 04/24/13 package dimensions dfn-10 (2.5x1.0x0.5mm) package dfn-10 (2.5x1.0x0.5mm) jedec mo-229 symbol millimeters inches min nom max min nom max a 0.48 0.515 0.55 0.019 0.020 0.021 a1 0.00 -- 0.05 0.000 0.022 a3 0.125 ref 0.005 ref b 0.15 0.20 0.25 0.006 0.008 0.012 b1 0.35 0.40 0.45 0.014 0.016 0.018 d 2.40 2.50 2.60 0.094 0.098 0.102 e 0.90 1. 0 0 1. 10 0.035 0.039 0.043 e 0.50 bsc 0.020 bsc l 0.30 0.365 0.43 0.012 0.014 0.016 d e b top view a a bottom view 0.05 c b a1 b1 a3 c seating plane side view 0.10 c a m b 0.05 c m l e 2xr0.075mm (7x) r0.125 0.05 c x1 x p p1 z (c) g y (y1) soldering pad layout recomended d e b top view a a bottom view 0.05 c b a1 b1 a3 c seating plane side view 0.10 c a m b 0.05 c m l e 2xr0.075mm (7x) r0.125 0.05 c x1 x p p1 z (c) g y (y1) soldering pad layout recomended soldering pad layout dimensions inch millimeter c (0.034) (0.875) g 0.008 0.20 p 0.020 0.50 p1 0.039 1. 0 0 x 0.008 0.20 x1 0.016 0.40 y 0.027 0.675 y1 (0.061) (1.55) z 0.061 1.55 x1 x p p1 z (c) g y (y1) soldering pad layou t alternative embossed carrier tape & reel specifcation dfn-10 package dfn-10 (2.5x1.0x0.5mm) symbol millimeters a0 1.30 0.10 b0 2.83 0.10 d0 ? 1.50 + 0.10 d1 ? 1.00 + 0.25 e 1.75 0.10 f 3.50 0.05 k0 0.65 0.10 p0 4.00 0.10 p1 4.00 0.10 p2 2.00 0.05 t 0.254 0.02 w 8.00 + 0.30 /- 0.10 k0 a0 b0 p2 p1 p0 t f e w d0 d1 5o max 5o max user f eeding direc tion pin 1 l ocation tvs diode arrays (spa ? diodes) low capacitance esd protection - sp3012 series
? 2013 littelfuse, inc. specifcations are subject to change without notice. revised: 04/24/13 package dimensions dfn-14 (3.5x1.35x0.5mm) dfn-14 (3.5x1.35x0.5mm) jedec mo-229 symbol millimeters inches min nom max min nom max a 0.45 0.50 0.55 0.018 0.020 0.022 a1 0.00 0.02 0.05 0.000 0.001 0.002 a2 0.203 ref 0.008 ref b 0.15 0.20 0.25 0.006 0.008 0.012 d 3.40 3.50 3.60 0.134 0.138 0.142 d2 - - - - - - e 1.25 1.35 1.45 0.050 0.054 0.058 e1 - - - - - - e 0.500 bsc 0.020 bsc l 0.25 0.30 0.35 0.010 0.012 0.014 d e b top view a bottom view side view pin 1 index area 1 2 3 4 a c b a1 a2 s eating plane pin 1 identi?cation chamfer 0.1 0x45o notes: 1. dimension and tolerancing comform to asme y14.5m-1994. 2. controlling dimensions: millimeter. converted inch dimensions are not necessarily exact. soldering pad layout recomended symbol m illimeter inches soldering pad layout dimensions symbol millimeters inches min nom max min nom max d 3.29 3.30 3.31 0.1295 0.1299 0.1303 e 1.44 1.45 1.46 0.0567 0.0571 0.0575 b 0.29 0.30 0.31 0.0114 0.0118 0.0122 l 0.39 0.40 0.41 0.0154 0.0158 0.0161 e 0.50 typ 0.020 typ s 0.19 0.20 0.21 0.0075 0.0078 0.0083 s1 0.64 0.65 0.66 0.0252 0.0256 0.0260 embossed carrier tape & reel specifcation dfn-14 symbol millimeters a0 1.58 0.10 b0 3.73 0.10 d0 0.60 + 0.05 d1 ? 0.60 + 0.05 e 1.75 0.10 f 5.50 0.05 k0 0.68 0.10 p0 2.00 0.05 p1 4.00 0.10 p2 4.00 0.10 t 0.28 0.02 w 12.00 + 0.30 /- 0.10 p0 d0 e f p1 p2 d1 w t b0 k0 a0 user f eeding dire ct ion pin 1 location tvs diode arrays (spa ? diodes) low capacitance esd protection - sp3012 series
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